Universal 1/ f type current noise of Ag filaments in redox-based memristive nanojunctions

Botond Sánta, Zoltán Balogh, Agnes Gubicza, László Pósa, Dávid Krisztián, György Mihály, Miklós Csontos, András Halbritter

Research output: Article

2 Citations (Scopus)


The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequency current noise spectra revealed that the main electronic noise contribution arises from the resistance fluctuations due to internal dynamical defects of Ag nanofilaments. The resulting 0.01-1% current noise ratio, i.e. the total noise level with respect to the mean value of the current, is found to be universal: its magnitude only depends on the total resistance of the device, irrespective of the materials aspects of the surrounding solid electrolyte and of the specific filament formation procedure. Moreover, the resistance dependence of the current noise ratio also displays the diffusive to ballistic crossover, confirming that stable resistive switching operation utilizing Ag nanofilaments is not compromised even in truly atomic scale junctions by technologically impeding noise levels.

Original languageEnglish
Pages (from-to)4719-4725
Number of pages7
Issue number11
Publication statusPublished - márc. 21 2019

ASJC Scopus subject areas

  • Materials Science(all)

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