Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge

Zoltán Balogh, Z. Erdélyi, D. Beke, G. Langer, A. Csík, Hans Gerd Boyen, Ulf Wiedwald, Paul Ziemann, Alain Portavoce, Christophe Girardeaux

Research output: Article

20 Citations (Scopus)

Abstract

Over the last years, several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution (x t kc) differs from the classical Fickian law (kc =0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous Si layer into amorphous Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive techniques, the initial kc was found at 0.7±0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc =0.5.

Original languageEnglish
Article number143104
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
Publication statusPublished - 2008

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dissolving
amorphous materials
kinetics

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  • Physics and Astronomy (miscellaneous)

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Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge. / Balogh, Zoltán; Erdélyi, Z.; Beke, D.; Langer, G.; Csík, A.; Boyen, Hans Gerd; Wiedwald, Ulf; Ziemann, Paul; Portavoce, Alain; Girardeaux, Christophe.

In: Applied Physics Letters, Vol. 92, No. 14, 143104, 2008.

Research output: Article

Balogh, Zoltán ; Erdélyi, Z. ; Beke, D. ; Langer, G. ; Csík, A. ; Boyen, Hans Gerd ; Wiedwald, Ulf ; Ziemann, Paul ; Portavoce, Alain ; Girardeaux, Christophe. / Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge. In: Applied Physics Letters. 2008 ; Vol. 92, No. 14.
@article{214ecd47b8d04662b656b1d84ee92e95,
title = "Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge",
abstract = "Over the last years, several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution (x t kc) differs from the classical Fickian law (kc =0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous Si layer into amorphous Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive techniques, the initial kc was found at 0.7±0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc =0.5.",
author = "Zolt{\'a}n Balogh and Z. Erd{\'e}lyi and D. Beke and G. Langer and A. Cs{\'i}k and Boyen, {Hans Gerd} and Ulf Wiedwald and Paul Ziemann and Alain Portavoce and Christophe Girardeaux",
year = "2008",
doi = "10.1063/1.2908220",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge

AU - Balogh, Zoltán

AU - Erdélyi, Z.

AU - Beke, D.

AU - Langer, G.

AU - Csík, A.

AU - Boyen, Hans Gerd

AU - Wiedwald, Ulf

AU - Ziemann, Paul

AU - Portavoce, Alain

AU - Girardeaux, Christophe

PY - 2008

Y1 - 2008

N2 - Over the last years, several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution (x t kc) differs from the classical Fickian law (kc =0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous Si layer into amorphous Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive techniques, the initial kc was found at 0.7±0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc =0.5.

AB - Over the last years, several experimental and theoretical studies of diffusion kinetics on the nanoscale have shown that the time evolution (x t kc) differs from the classical Fickian law (kc =0.5). However, all work was based on crystalline samples or models, so far. In this letter, we report on the diffusion kinetics of a thin amorphous Si layer into amorphous Ge to account for the rising importance of amorphous materials in nanodevices. Employing surface sensitive techniques, the initial kc was found at 0.7±0.1. Moreover, after some monolayers of Si dissolved into the Ge, kc changes to the generally expected classical Fickian law with kc =0.5.

UR - http://www.scopus.com/inward/record.url?scp=42149090543&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149090543&partnerID=8YFLogxK

U2 - 10.1063/1.2908220

DO - 10.1063/1.2908220

M3 - Article

AN - SCOPUS:42149090543

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 143104

ER -