Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors

Research output: Chapter

Original languageEnglish
Title of host publicationAdvanced Calculations for Defects in Materials
Subtitle of host publicationElectronic Structure Methods
PublisherWiley-VCH
Pages341-358
Number of pages18
ISBN (Print)9783527410248
DOIs
Publication statusPublished - jún. 18 2011

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Gali, A. (2011). Time-Dependent Density Functional Study on the Excitation Spectrum of Point Defects in Semiconductors. In Advanced Calculations for Defects in Materials: Electronic Structure Methods (pp. 341-358). Wiley-VCH. https://doi.org/10.1002/9783527638529.ch18