Theory of neutral divacancy in SiC: A defect for spintronics

A. Gali, A. Gällström, N. T. Son, E. Janzén

Research output: Conference contribution

27 Citations (Scopus)

Abstract

We investigate the neutral divacancy in SiC by means of first principles calculations and group theory analysis. We identify the nature of the PL transitions associated with this defect. We show that how the spin state may be manipulated optically in this defect.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages395-397
Number of pages3
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - jan. 1 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: okt. 11 2009okt. 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Gali, A., Gällström, A., Son, N. T., & Janzén, E. (2010). Theory of neutral divacancy in SiC: A defect for spintronics. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 395-397). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.395