Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: Bistable, negative-U defects

A. Gali, T. Hornos, P. Deák, N. T. Son, E. Janzén, W. J. Choyke

Research output: Conference contribution

4 Citations (Scopus)

Abstract

Interaction of boron and aluminum with interstitial carbon is studied using first principles calculations. It is shown that carbon can form very stable complexes with Al and B, forming a family of negative-U bistable defects with deep levels. The influence of this effect on the activation rate of p-type implants is discussed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials
Pages519-522
Number of pages4
Publication statusPublished - dec. 1 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: aug. 31 2004szept. 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)0255-5476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Gali, A., Hornos, T., Deák, P., Son, N. T., Janzén, E., & Choyke, W. J. (2005). Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: Bistable, negative-U defects. In Silicon Carbide and Related Materials 2004, ECSCRM 2004 - Proceedings of 5th European Conference on Silicon Carbide and Related Materials (pp. 519-522). (Materials Science Forum; Vol. 483-485).