Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC

Viktor Ivády, Igor Abrikosov, Erik Janzén, Adam Gali

Research output: Conference contribution

Abstract

Well addressable and controllable point defects in device friendly semiconductors are desired for quantum computational and quantum informational processes. Recently, such defect, an ultra-bright single photon emitter, the carbon antisite - vacancy pair, was experimentally investigated in 4H-SiC. In our theoretical work, based on ab initio calculation and group theory analysis, we provide a deeper understanding of the features of the electronic structures and the luminescence process of this defect.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages495-498
Number of pages4
Volume778-780
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: szept. 29 2013okt. 4 2013

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period9/29/1310/4/13

Fingerprint

emitters
Carbon
Photons
Group theory
Defects
carbon
group theory
defects
photons
Point defects
Semiconductor devices
semiconductor devices
point defects
Vacancies
Electronic structure
Luminescence
luminescence
electronic structure

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Ivády, V., Abrikosov, I., Janzén, E., & Gali, A. (2014). Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. In Materials Science Forum (Vol. 778-780, pp. 495-498). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.495

Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. / Ivády, Viktor; Abrikosov, Igor; Janzén, Erik; Gali, Adam.

Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. p. 495-498 (Materials Science Forum; Vol. 778-780).

Research output: Conference contribution

Ivády, V, Abrikosov, I, Janzén, E & Gali, A 2014, Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. in Materials Science Forum. vol. 778-780, Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 495-498, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 9/29/13. https://doi.org/10.4028/www.scientific.net/MSF.778-780.495
Ivády V, Abrikosov I, Janzén E, Gali A. Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. In Materials Science Forum. Vol. 778-780. Trans Tech Publications Ltd. 2014. p. 495-498. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.495
Ivády, Viktor ; Abrikosov, Igor ; Janzén, Erik ; Gali, Adam. / Theoretical investigation of the single photon emitter carbon antisitevacancy pair in 4H-SiC. Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. pp. 495-498 (Materials Science Forum).
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