The silicon vacancy in SiC

Erik Janzén, A. Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, N. T. Son

Research output: Article

40 Citations (Scopus)

Abstract

The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.

Original languageEnglish
Pages (from-to)4354-4358
Number of pages5
JournalPhysica B: Condensed Matter
Volume404
Issue number22
DOIs
Publication statusPublished - dec. 1 2009

Fingerprint

Silicon
Vacancies
silicon
Defects
Optical transitions
defects
Magnetic resonance
optical transition
magnetic resonance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Janzén, E., Gali, A., Carlsson, P., Gällström, A., Magnusson, B., & Son, N. T. (2009). The silicon vacancy in SiC. Physica B: Condensed Matter, 404(22), 4354-4358. https://doi.org/10.1016/j.physb.2009.09.023

The silicon vacancy in SiC. / Janzén, Erik; Gali, A.; Carlsson, Patrick; Gällström, Andreas; Magnusson, Björn; Son, N. T.

In: Physica B: Condensed Matter, Vol. 404, No. 22, 01.12.2009, p. 4354-4358.

Research output: Article

Janzén, E, Gali, A, Carlsson, P, Gällström, A, Magnusson, B & Son, NT 2009, 'The silicon vacancy in SiC', Physica B: Condensed Matter, vol. 404, no. 22, pp. 4354-4358. https://doi.org/10.1016/j.physb.2009.09.023
Janzén E, Gali A, Carlsson P, Gällström A, Magnusson B, Son NT. The silicon vacancy in SiC. Physica B: Condensed Matter. 2009 dec. 1;404(22):4354-4358. https://doi.org/10.1016/j.physb.2009.09.023
Janzén, Erik ; Gali, A. ; Carlsson, Patrick ; Gällström, Andreas ; Magnusson, Björn ; Son, N. T. / The silicon vacancy in SiC. In: Physica B: Condensed Matter. 2009 ; Vol. 404, No. 22. pp. 4354-4358.
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