The oxidation of tantalum-based thin films

V. P. Kolonits, M. Czermann, O. Geszti, M. Menyhárd

Research output: Article

11 Citations (Scopus)

Abstract

Using different techniques (Auger electron spectroscopy, Rutherford back-scattering spectrometry, transmission electron microscopy and electrical measurements) a region of tantalum nitride layer composition was found where the increase in resistance (during thermal oxidation) is caused only by the decrease in thickness of the metallic part of the film. By means of the very sensitive method of the resistance measurements these compositions were shown to be suitable for the study of the thermal oxidation kinetics in the temperature range 266-464°C and in the oxidized thickness x range from the "air oxide" to 80 nm. Empirical dx dt=f(x) functions determined at different temperatures were compared with the well-known oxidation rate laws of the literature. The shape of these empirical functions was described by the use of the dx dt=Asinh( B x) rate law.

Original languageEnglish
Pages (from-to)45-55
Number of pages11
JournalThin Solid Films
Volume123
Issue number1
DOIs
Publication statusPublished - jan. 4 1985

Fingerprint

Tantalum
tantalum
Thin films
Oxidation
oxidation
thin films
tantalum nitrides
Auger electron spectroscopy
thermal resistance
Chemical analysis
Heat resistance
Nitrides
Oxides
electrical measurement
Spectrometry
Auger spectroscopy
electron spectroscopy
Scattering
Transmission electron microscopy
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The oxidation of tantalum-based thin films. / Kolonits, V. P.; Czermann, M.; Geszti, O.; Menyhárd, M.

In: Thin Solid Films, Vol. 123, No. 1, 04.01.1985, p. 45-55.

Research output: Article

Kolonits, V. P. ; Czermann, M. ; Geszti, O. ; Menyhárd, M. / The oxidation of tantalum-based thin films. In: Thin Solid Films. 1985 ; Vol. 123, No. 1. pp. 45-55.
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