The mechanism of interface state passivation by no

P. Deák, T. Hornos, Ch Thill, J. Knaup, A. Gali, Th Frauenheim

Research output: Conference contribution

3 Citations (Scopus)

Abstract

Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which the balance between various mechanisms depends on doping and temperature. For weakly doped (1015-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess car-bon at the interface.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
EditorsN. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
PublisherTrans Tech Publications Ltd
Pages541-544
Number of pages4
ISBN (Print)0878494421, 9780878494422, 9780878494422
DOIs
Publication statusPublished - jan. 1 2007
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006 - Newcastle upon Tyne, United Kingdom
Duration: szept. 3 2006szept. 7 2006

Publication series

NameMaterials Science Forum
Volume556-557
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference6th European Conference on Silicon Carbide and Related Materials, ECSCRM 20006
CountryUnited Kingdom
CityNewcastle upon Tyne
Period9/3/069/7/06

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Deák, P., Hornos, T., Thill, C., Knaup, J., Gali, A., & Frauenheim, T. (2007). The mechanism of interface state passivation by no. In N. Wright, C. M. Johnson, K. Vassilevski, I. Nikitina, & A. Horsfall (Eds.), Silicon Carbide and Related Materials 2006 - ECSCRM 2006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials (pp. 541-544). (Materials Science Forum; Vol. 556-557). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.556-557.541