We have studied the effect of the morphology on transient photocurrents of glow discharge α-Si:H layers. We have found a large density of deep states in our samples where monohydride bonding is dominant. In transient photocurrent measurements the range limitation has been overcome only at high electric field and light intensity. This large density of deep states seems to be independent of microstructure. The microstructure of the sample has an effect on the electron mobility. In samples showing strong columnar-like structures the mobility is in the range of 0.01 cm2/Vs while in those layers which seem to be nearly structureless by SEM better than 0.1 cm2/Vs value can be measured.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry