The effect of the metal-semiconductor interface on the barrier height in GaAs Schottky junctions

Research output: Article

5 Citations (Scopus)

Abstract

General interfacial layer expressions for the equilibrium Schottky barrier height are presented for both n and p-type semiconductors. The sum of the barrier height values is analysed as a function of the Fermi-level pinning. The effect of different technological steps on the interface parameters and on the barrier height is studied in GaAs Schottky junctions. Relations between the interface parameters and the barrier heights are presented for GaAs-Au junctions.

Original languageEnglish
Pages (from-to)804-806
Number of pages3
JournalVacuum
Volume41
Issue number4-6
DOIs
Publication statusPublished - 1990

Fingerprint

Fermi level
Metals
Semiconductor materials
metals
p-type semiconductors
n-type semiconductors
gallium arsenide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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title = "The effect of the metal-semiconductor interface on the barrier height in GaAs Schottky junctions",
abstract = "General interfacial layer expressions for the equilibrium Schottky barrier height are presented for both n and p-type semiconductors. The sum of the barrier height values is analysed as a function of the Fermi-level pinning. The effect of different technological steps on the interface parameters and on the barrier height is studied in GaAs Schottky junctions. Relations between the interface parameters and the barrier heights are presented for GaAs-Au junctions.",
author = "Z. Horv{\'a}th",
year = "1990",
doi = "10.1016/0042-207X(90)93789-L",
language = "English",
volume = "41",
pages = "804--806",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "4-6",

}

TY - JOUR

T1 - The effect of the metal-semiconductor interface on the barrier height in GaAs Schottky junctions

AU - Horváth, Z.

PY - 1990

Y1 - 1990

N2 - General interfacial layer expressions for the equilibrium Schottky barrier height are presented for both n and p-type semiconductors. The sum of the barrier height values is analysed as a function of the Fermi-level pinning. The effect of different technological steps on the interface parameters and on the barrier height is studied in GaAs Schottky junctions. Relations between the interface parameters and the barrier heights are presented for GaAs-Au junctions.

AB - General interfacial layer expressions for the equilibrium Schottky barrier height are presented for both n and p-type semiconductors. The sum of the barrier height values is analysed as a function of the Fermi-level pinning. The effect of different technological steps on the interface parameters and on the barrier height is studied in GaAs Schottky junctions. Relations between the interface parameters and the barrier heights are presented for GaAs-Au junctions.

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U2 - 10.1016/0042-207X(90)93789-L

DO - 10.1016/0042-207X(90)93789-L

M3 - Article

VL - 41

SP - 804

EP - 806

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 4-6

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