The chemical resistance of nano-sized SiC rich composite coating

S. Gurbán, L. Kotis, A. Pongracz, A. Sulyok, A. Tóth, E. Vázsonyi, M. Menyhárd

Research output: Article

4 Citations (Scopus)

Abstract

30keVGa+ implantation was applied to a nominally C(20nm)/Si(20nm)/C(20nm)/Si(20nm)/C(20nm)/Si substrate multilayer system. Due to the irradiation intermixing occurred and a layer containing C, Si, Ga and (amorphous) SiC was obtained. The thickness (7-30nm) and composition of the layer depended on the fluence of irradiation. The chemical resistance of the layer was tested by applying microwave oxidation and various polysilicon etchants and was found to be excellent if the SiC concentration was above 20%. Using an etchant with an etching rate of about 100nm/s for poly-Si during 10s had not affected the integrity of the intermixed region with a thickness of 10nm; only some defects appeared. With a further increase of the etching time the size of defects increased resulting in inhomogeneous layer removal. The in-depth composition of non-defective region that remained on the surface was determined by AES depth profiling, which revealed that the intermixed layer did not change during the harsh etching except the removal of its thin surface layer containing less than 20% SiC. The etching rate of the intermixed layer is orders of magnitude lower than that for poly-Si.

Original languageEnglish
Pages (from-to)195-200
Number of pages6
JournalSurface and Coatings Technology
Volume261
DOIs
Publication statusPublished - jan. 15 2015

Fingerprint

Chemical resistance
Composite coatings
Etching
coatings
composite materials
Polysilicon
etching
etchants
Irradiation
Defects
Depth profiling
Chemical analysis
Multilayers
irradiation
Microwaves
defects
Oxidation
integrity
implantation
surface layers

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

The chemical resistance of nano-sized SiC rich composite coating. / Gurbán, S.; Kotis, L.; Pongracz, A.; Sulyok, A.; Tóth, A.; Vázsonyi, E.; Menyhárd, M.

In: Surface and Coatings Technology, Vol. 261, 15.01.2015, p. 195-200.

Research output: Article

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AU - Gurbán, S.

AU - Kotis, L.

AU - Pongracz, A.

AU - Sulyok, A.

AU - Tóth, A.

AU - Vázsonyi, E.

AU - Menyhárd, M.

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AB - 30keVGa+ implantation was applied to a nominally C(20nm)/Si(20nm)/C(20nm)/Si(20nm)/C(20nm)/Si substrate multilayer system. Due to the irradiation intermixing occurred and a layer containing C, Si, Ga and (amorphous) SiC was obtained. The thickness (7-30nm) and composition of the layer depended on the fluence of irradiation. The chemical resistance of the layer was tested by applying microwave oxidation and various polysilicon etchants and was found to be excellent if the SiC concentration was above 20%. Using an etchant with an etching rate of about 100nm/s for poly-Si during 10s had not affected the integrity of the intermixed region with a thickness of 10nm; only some defects appeared. With a further increase of the etching time the size of defects increased resulting in inhomogeneous layer removal. The in-depth composition of non-defective region that remained on the surface was determined by AES depth profiling, which revealed that the intermixed layer did not change during the harsh etching except the removal of its thin surface layer containing less than 20% SiC. The etching rate of the intermixed layer is orders of magnitude lower than that for poly-Si.

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