Texture change of TiN films due to anisotropic incorporation of oxygen

D. Biro, M. F. Hasaneen, L. Székely, M. Menyhárd, S. Gurbán, P. Pekker, I. Dódony, P. B. Barna

Research output: Article

10 Citations (Scopus)

Abstract

Results of comprehensive structural and microchemical analyses revealed the mechanisms responsible for changing the <111> to <001> competitive growth texture of TiN films when the level of oxygen doping was 20 at.%. It has been shown that the growth competition is related to the different way of segregation-incorporation of the oxygen species on the {001} and {111} crystal faces. Oxygen is preferentially segregated on the {111} crystal face and is growing in the form of a 2D TiO2 surface layer on the growth surface, limiting the growth of <111> oriented crystals. On the {001} faces, however, the major part of condensing oxygen species is dissolved into the crystal lattice and only a part forms TiO2 aggregates. These aggregates have a 3D morphology which do not hinder the growth of <001> oriented crystals. Consequently, the <001> oriented crystals win the growth competition leading to a film structure constituted of V-shaped columns.

Original languageEnglish
Pages (from-to)78-86
Number of pages9
JournalVacuum
Volume103
DOIs
Publication statusPublished - máj. 2014

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Texture change of TiN films due to anisotropic incorporation of oxygen'. Together they form a unique fingerprint.

  • Cite this