10Boron distribution measurement in laser ablated B4C thin films using (n,α) reaction and LR-115 passive detector

L. Sajó-Bohus, A. Simon, T. Csákó, P. Nemeth, D. Palacios, G. Espinosa, E. D. Greaves, T. Szörényi, H. Barros

Research output: Article

3 Citations (Scopus)

Abstract

Lateral distribution of the 10B isotope within a boron carbide film of 550 nm maximum thickness deposited on silicon wafer using pulsed laser deposition technique has been determined taking advantage of the high cross section for (n,α) reaction and nuclear tracks detectors (NTD - LR-115 Kodak Pathé). A radioisotope neutron source (252Cf, 20 μg) and a 60 × 60 × 80 cm3 graphite cube as moderator produce a relatively uniform thermal neutron field. Details of the passive detector etching process and data processing are included. The track density reveals the boron density spatial distribution. A 3D picture is produced to visualize the boron-10 spatial distribution. The result suggests that a gradient in the boron distribution exists to almost a factor of three. The advantages of the technique are discussed.

Original languageEnglish
Pages (from-to)795-797
Number of pages3
JournalRadiation Measurements
Volume44
Issue number9-10
DOIs
Publication statusPublished - okt. 1 2009

    Fingerprint

ASJC Scopus subject areas

  • Radiation
  • Instrumentation

Cite this

Sajó-Bohus, L., Simon, A., Csákó, T., Nemeth, P., Palacios, D., Espinosa, G., Greaves, E. D., Szörényi, T., & Barros, H. (2009). 10Boron distribution measurement in laser ablated B4C thin films using (n,α) reaction and LR-115 passive detector. Radiation Measurements, 44(9-10), 795-797. https://doi.org/10.1016/j.radmeas.2009.10.046