Structure of high-photosensitivity silicon-oxygen alloy films

H. Watanabe, K. Haga, T. Lohner

Research output: Article

66 Citations (Scopus)

Abstract

Amorphous silicon-oxygen alloy films with various composition have been prepared by r.f. glow discharge decomposition of SiH4 and CO2 gas mixtures. The analysis of infrared absorption spectra and x-ray photoemission spectra shows that the film consists of two phases, a silicon-rich phase and an oxygen-rich phase. We suggest that this two-phase structure results in the high photoconductivity with wide optical gap in these films.

Original languageEnglish
Pages (from-to)1085-1088
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 2
DOIs
Publication statusPublished - dec. 2 1993

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Cite this