Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films

Mitsutoshi Miyasaka, Kenji Makihira, Tanemasa Asano Béla Pecz, Béla Pecz, John Stoemenos

Research output: Conference article

1 Citation (Scopus)


The nickel metal-induced-lateral-crystallized silicon films are studied in detail. Laterally grown crystalline grains can be as large as 17 μm, though the grains consist of small misorientated sub-grains and some sub-grains are divided further into overlapping upper and lower sub-grains. The nickel-induced crystallization starts with thin needle-like crystallites, which advance along the 〈111〉 directions within the film plane. These thin needle-like crystallites grow by successive jumps with a very fast growth rate. The fast growth rate and the small probability that the 〈111〉 growth directions are within the film plane result in the laterally grown large grains.

Original languageEnglish
Pages (from-to)213-218
Number of pages6
JournalSolid State Phenomena
Publication statusPublished - jan. 1 2003
EventPolycrystalline Semiconductors VII - Nara, United States
Duration: szept. 10 2003szept. 13 2003


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Miyasaka, M., Makihira, K., Béla Pecz, T. A., Pecz, B., & Stoemenos, J. (2003). Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films. Solid State Phenomena, 93, 213-218.