Amorphous vanadium pentoxide thin films were prepared by CVD of VOCl3 with H2O at room temperature. The amorphous- to-crystalline transition temperature of the material was found at about 240°C. The DTA curves and IR spectra showed that the films contained water. The V4+ content of the films was estimated from quantitative EPR measurements. The results verify that CVD is an appropriate method to produce near stoichiometric / V4+ content: 1.5-2.0% / amorphous vanadium pentoxide thin films.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry