Structural characterization of amorphous vanadium pentoxide thin films prepared by chemical vapour deposition /CVD/

T. Szörényi, K. Bali, I. Hevesi

Research output: Article

39 Citations (Scopus)


Amorphous vanadium pentoxide thin films were prepared by CVD of VOCl3 with H2O at room temperature. The amorphous- to-crystalline transition temperature of the material was found at about 240°C. The DTA curves and IR spectra showed that the films contained water. The V4+ content of the films was estimated from quantitative EPR measurements. The results verify that CVD is an appropriate method to produce near stoichiometric / V4+ content: 1.5-2.0% / amorphous vanadium pentoxide thin films.

Original languageEnglish
Pages (from-to)1245-1248
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
Publication statusPublished - jan. 1 1980


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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