Structural and electrical properties of Ni-Cu films deposited onto MgO(001) by d.c. biased plasma sputter deposition

H. Qiu, M. Hashimoto, A. Barna, P. B. Barna

Research output: Article

14 Citations (Scopus)

Abstract

Ni-Cu alloy films were deposited onto Mg0(001) substrates at 230°C by d.c. plasma sputtering at 2.7 kV and 8 mA in pure Ar gas using an Ni-10wt.%Cu alloy target. The deposition time was 15 or 30 min. A d.c. bias voltage Vs ranging from 0 to - 140 V was applied to the substrate during deposition. The structure, composition and electrical properties of the films were studied as a function of Vs using cross-sectional transmission electron microscopy (XTEM) and X-ray photoelectron spectroscopy (XPS), and measurements of the temperature coefficient of electrical resistance (TCR) from - 135 to - 15°C. The alloy films, which have the f.c.c. lattice of the components, are monocrystalline with the relationship Ni-Cu(001) ∥MgO(001) and Ni-Cu [010] ∥MgO[010] unless Vsp = - 110 V. The Cu content in the films decreases from 8 wt.% to 3 wt.% as Vs increases from O to - 140 V. The growth rate of the films and the value of TCR η (η > 0) depend on Vs; the film thickness d for the films deposited for 30 min reaches 50±1 nm at Vs = 0 V and 74 ± 2 nm at Vs = - 140 V, while η for the films deposited for 30 min increases appreciably with increasing Vs compared with the films deposited for 15 min, although η is highest at Vs = - 140 V for both cases.

Original languageEnglish
Pages (from-to)171-175
Number of pages5
JournalThin Solid Films
Volume288
Issue number1-2
DOIs
Publication statusPublished - nov. 15 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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