Sputtered SiO2:C films showing visible photoluminescence

M. Sendova-Vassileva, N. Tzenov, D. Dimova-Malinovska, K. V. Josepovits

Research output: Conference article

7 Citations (Scopus)

Abstract

Luminescent a-Si:O:C layers were obtained by magnetron co-sputtering and annealing. Maximum photoluminescence intensity is comparable to that of porous silicon. Luminescence maximum is between 1.8 eV and 2.2 eV. X-ray photoelectron spectroscopy (XPS) finds Si-O, C-Si and C-C bonding. Secondary ion mass spectrometry(SIMS) data are presented.

Original languageEnglish
Pages (from-to)395-400
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume417
Publication statusPublished - jan. 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: nov. 27 1995dec. 1 1995

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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