Spatial distribution of residual stress in diamond-silicon carbide composites

T. W. Zerda, M. Wieligor, T. Ungar, B. Palosz

Research output: Conference article

4 Citations (Scopus)


Raman spectroscopy and x-ray diffraction whole profile analysis were used to analyze strain in diamond crystals in diamond-silicon carbide composites. The composites were obtained by the infiltration technique from diamond and silicon powders at 8 GPa and 2173 K. Frequency shifts of Raman peak of diamond were used to calculate residual stress and then to draw maps of stress distribution on the surface of diamonds. Large stresses were formed near contact points between diamond crystals. Analysis of profiles of three x-ray reflections of diamond provided information on dislocations and crystallites sizes. After sintering crystallites which scattered x-ray coherently had small sizes which depended on the dimensions of diamond crystal used in the sintering process.

Original languageEnglish
Article number062007
JournalJournal of Physics: Conference Series
Issue numberPART 6
Publication statusPublished - jan. 1 2008
EventJoint 21st AIRAPT and 45th EHPRG International Conference on High Pressure Science and Technology - Catania, Italy
Duration: szept. 17 2007szept. 21 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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