The space charge transients of a deep level defect characterised by Auger capture have been investigated. The work was motivated by capacitance-voltage and deep level transient spectroscopy measurements of various DX doped GaAlAs samples. It is shown that compared to a defect with the usual single electron capture process such defects exhibit a basically different behaviour. The detection of such defects by space charge transient techniques (e.g. capacitance, admittance and DLTS measurements) is rather limited, and evaluation of the data requires modification of the usually applied simple models. The above defects belong to a new class of technologically important defects which may affect degradation and efficiency in several devices.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry