Simulation of the backscattered electron intensity of multi layer structure for the explanation of secondary electron contrast

A. Sulyok, A. L. Toth, L. Zommer, M. Menyhard, A. Jablonski

Research output: Article

2 Citations (Scopus)

Abstract

The intensities of the secondary electrons (SE) and of the backscattered electrons (BSE) at energy 100. eV have been measured on a Ni/C/Ni/C/Ni/C/(Si substrate) multilayer structure by exciting it with primary electrons of 5, 2.5 and 1.25. keV energies. It has been found that both intensities similarly vary while thinning the specimen. The difference as small as 4. nm in the underlying layer thicknesses resulted in visible intensity change. Utilizing this intensity change, the thickness difference of neighboring regions could be revealed from the SE image. No simple phenomenological model was found to interpret the change of intensity, thus the intensity of the BSE electrons has been calculated by means of a newly developed Monte Carlo simulation. This code also considers the secondary electron generation and transport through the solid. The calculated and measured intensities agree well supporting the validity of the model.

Original languageEnglish
Pages (from-to)88-95
Number of pages8
JournalUltramicroscopy
Volume124
DOIs
Publication statusPublished - jan. 1 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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