Silicon carbide: A playground for ID-modulation electronics

Peter Deák, Adam Buruzs, A. Gali, Thomas Frauenheim, W. J. Choyke

Research output: Conference contribution

Abstract

Optoelectronic devices with ID modulation of the potential through hetero-structure or doping superlattices have so far been the privilege of III-V semiconductors. Based on the fact that SiC can be grown monolayer by monolayer, and that Si-Si and C-C double layers have been observed in it, we suggest the possibility of a stress-free polarization superlattice, consisting of the periodic variation of Si-face and C-face domains along the hexagonal axis of 4H-SiC. Such a structure could, in principle, be grown by molecular source atomic layer epitaxy. Investigating such superlattices by density functional theory, using a hybrid functional, we show that Si-Si and C-C double layers at the antiphase boundaries confine electrons within ∼0.5 nm, and the periodic polarization field causes zig-zag shaped band edges which gives rise to tunable absorption, to spatial separation of free electrons and holes, as well as to optical nonlinearity. These properties could allow the application of SiC also in optoelectronics and photonics.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages355-358
Number of pages4
Volume527-529
EditionPART 1
Publication statusPublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: szept. 18 2005szept. 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Superlattices
Silicon carbide
Optoelectronic devices
Monolayers
Electronic equipment
Modulation
Atomic layer epitaxy
Polarization
Electrons
Photonics
Density functional theory
Doping (additives)
silicon carbide
III-V semiconductors

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Deák, P., Buruzs, A., Gali, A., Frauenheim, T., & Choyke, W. J. (2006). Silicon carbide: A playground for ID-modulation electronics. In Materials Science Forum (PART 1 ed., Vol. 527-529, pp. 355-358). (Materials Science Forum; Vol. 527-529, No. PART 1).

Silicon carbide : A playground for ID-modulation electronics. / Deák, Peter; Buruzs, Adam; Gali, A.; Frauenheim, Thomas; Choyke, W. J.

Materials Science Forum. Vol. 527-529 PART 1. ed. 2006. p. 355-358 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Conference contribution

Deák, P, Buruzs, A, Gali, A, Frauenheim, T & Choyke, WJ 2006, Silicon carbide: A playground for ID-modulation electronics. in Materials Science Forum. PART 1 edn, vol. 527-529, Materials Science Forum, no. PART 1, vol. 527-529, pp. 355-358, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.
Deák P, Buruzs A, Gali A, Frauenheim T, Choyke WJ. Silicon carbide: A playground for ID-modulation electronics. In Materials Science Forum. PART 1 ed. Vol. 527-529. 2006. p. 355-358. (Materials Science Forum; PART 1).
Deák, Peter ; Buruzs, Adam ; Gali, A. ; Frauenheim, Thomas ; Choyke, W. J. / Silicon carbide : A playground for ID-modulation electronics. Materials Science Forum. Vol. 527-529 PART 1. ed. 2006. pp. 355-358 (Materials Science Forum; PART 1).
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