Signature of the negative carbon vacancy-antisite complex

M. Bockstedte, A. Gali, T. Umeda, N. T. Son, J. Isoya, E. Janzén

Research output: Conference contribution

6 Citations (Scopus)

Abstract

The negative carbon vacancy antisite complex is analysed by ab initio theory in view of the SI5 EPR-center. The complex occurs in a Jahn-Teller distorted ground state and a meta stable state. This and the calculated hyperfine structure agree nicely with the temperature dependent EPR spectra of SI5. An interpretation of the photo-EPR experiments is proposed.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages539-542
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
Publication statusPublished - jan. 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: szept. 18 2005szept. 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Bockstedte, M., Gali, A., Umeda, T., Son, N. T., Isoya, J., & Janzén, E. (2006). Signature of the negative carbon vacancy-antisite complex. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 539-542). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd.