Shallow P donors in 3C-, AH-, and 6H-SiC

J. Isoya, M. Katagiri, T. Umeda, N. T. Son, A. Henry, A. Gali, N. Morishita, T. Ohshima, H. Itoh, E. Janzén

Research output: Conference contribution

3 Citations (Scopus)

Abstract

EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free from the interference from the signals from the nitrogen shallow donors.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages593-596
Number of pages4
EditionPART 1
Publication statusPublished - dec. 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: szept. 18 2005szept. 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Isoya, J., Katagiri, M., Umeda, T., Son, N. T., Henry, A., Gali, A., Morishita, N., Ohshima, T., Itoh, H., & Janzén, E. (2006). Shallow P donors in 3C-, AH-, and 6H-SiC. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 593-596). (Materials Science Forum; Vol. 527-529, No. PART 1).