Sensitivity tuning of A 3-axial piezoresistive force sensor

D. Molnár, A. Pongrácz, M. Ádám, Z. Hajnal, V. Timárné, G. Battistig

Research output: Article

4 Citations (Scopus)

Abstract

Design and development of a Si based full membrane piezoresistive 3D force sensor is presented in this paper. Four piezoresistors are formed by ion implantation on the back side of a thin Si membrane, while on the front side a 380 μm high Si mesa is produced by subtractive dry etching (deep reactive ion etching). The external force is applied on the top of the mesa. The applied force vector, i.e. its normal and shear force components are determined by combining the responses of the four piezoresistors. The effect of different parameters - the shape and thickness of the membrane, the cross section of the mesa - on the sensitivity of the sensor is analyzed systematically by finite element methods. Comparison of the characteristics of the different sensor designs obtained from simulations and from experimental measurements is also presented.

Original languageEnglish
Pages (from-to)40-43
Number of pages4
JournalMicroelectronic Engineering
Volume90
DOIs
Publication statusPublished - febr. 2012

Fingerprint

mesas
Tuning
tuning
Membranes
sensitivity
sensors
Sensors
membranes
Dry etching
Reactive ion etching
etching
Ion implantation
ion implantation
Finite element method
finite element method
shear
cross sections
ions
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Sensitivity tuning of A 3-axial piezoresistive force sensor. / Molnár, D.; Pongrácz, A.; Ádám, M.; Hajnal, Z.; Timárné, V.; Battistig, G.

In: Microelectronic Engineering, Vol. 90, 02.2012, p. 40-43.

Research output: Article

Molnár, D. ; Pongrácz, A. ; Ádám, M. ; Hajnal, Z. ; Timárné, V. ; Battistig, G. / Sensitivity tuning of A 3-axial piezoresistive force sensor. In: Microelectronic Engineering. 2012 ; Vol. 90. pp. 40-43.
@article{cdc0a56f5bc5404c88a269751a39e449,
title = "Sensitivity tuning of A 3-axial piezoresistive force sensor",
abstract = "Design and development of a Si based full membrane piezoresistive 3D force sensor is presented in this paper. Four piezoresistors are formed by ion implantation on the back side of a thin Si membrane, while on the front side a 380 μm high Si mesa is produced by subtractive dry etching (deep reactive ion etching). The external force is applied on the top of the mesa. The applied force vector, i.e. its normal and shear force components are determined by combining the responses of the four piezoresistors. The effect of different parameters - the shape and thickness of the membrane, the cross section of the mesa - on the sensitivity of the sensor is analyzed systematically by finite element methods. Comparison of the characteristics of the different sensor designs obtained from simulations and from experimental measurements is also presented.",
keywords = "3D-force sensor, DRIE, FEM simulations, Piezoresistivity",
author = "D. Moln{\'a}r and A. Pongr{\'a}cz and M. {\'A}d{\'a}m and Z. Hajnal and V. Tim{\'a}rn{\'e} and G. Battistig",
year = "2012",
month = "2",
doi = "10.1016/j.mee.2011.05.030",
language = "English",
volume = "90",
pages = "40--43",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Sensitivity tuning of A 3-axial piezoresistive force sensor

AU - Molnár, D.

AU - Pongrácz, A.

AU - Ádám, M.

AU - Hajnal, Z.

AU - Timárné, V.

AU - Battistig, G.

PY - 2012/2

Y1 - 2012/2

N2 - Design and development of a Si based full membrane piezoresistive 3D force sensor is presented in this paper. Four piezoresistors are formed by ion implantation on the back side of a thin Si membrane, while on the front side a 380 μm high Si mesa is produced by subtractive dry etching (deep reactive ion etching). The external force is applied on the top of the mesa. The applied force vector, i.e. its normal and shear force components are determined by combining the responses of the four piezoresistors. The effect of different parameters - the shape and thickness of the membrane, the cross section of the mesa - on the sensitivity of the sensor is analyzed systematically by finite element methods. Comparison of the characteristics of the different sensor designs obtained from simulations and from experimental measurements is also presented.

AB - Design and development of a Si based full membrane piezoresistive 3D force sensor is presented in this paper. Four piezoresistors are formed by ion implantation on the back side of a thin Si membrane, while on the front side a 380 μm high Si mesa is produced by subtractive dry etching (deep reactive ion etching). The external force is applied on the top of the mesa. The applied force vector, i.e. its normal and shear force components are determined by combining the responses of the four piezoresistors. The effect of different parameters - the shape and thickness of the membrane, the cross section of the mesa - on the sensitivity of the sensor is analyzed systematically by finite element methods. Comparison of the characteristics of the different sensor designs obtained from simulations and from experimental measurements is also presented.

KW - 3D-force sensor

KW - DRIE

KW - FEM simulations

KW - Piezoresistivity

UR - http://www.scopus.com/inward/record.url?scp=82555192483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82555192483&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.05.030

DO - 10.1016/j.mee.2011.05.030

M3 - Article

VL - 90

SP - 40

EP - 43

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -