Selective, temperature compensated O2 sensor based on Ga2O3 thin films

T. Schwebel, M. Fleischer, H. Meixner

Research output: Conference article

36 Citations (Scopus)

Abstract

Pure semiconducting Ga2O3 thin films show a reaction to reducing gases as well to oxygen variations at operation temperatures between 600 °C-900 °C. By applying surface modifications with catalytically active oxides like La2O3 or CeO2, a complete suppression of the reaction to reducing gases in oxygen-rich atmospheres could be achieved, yielding devices that only respond to the oxygen content. By an analysis of the desorbing gases with NIR-Spectroscopy, varying production rates of carbon oxides and unsaturated carbohydrates were observed. A modification with manganese oxide yielded complete gas-insensitive devices, which still show a thermal-activated conductivity. This effect can be used for temperature compensation purposes.

Original languageEnglish
Pages (from-to)176-180
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume65
Issue number1
DOIs
Publication statusPublished - jún. 30 2000
EventIMCS-7: 7th International Meeting on Chemical Sensors - Beijing, China
Duration: júl. 27 1998júl. 30 1998

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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