A new DLTS method is proposed for selective detection of deep recombination centers. Using electrical excitation pulses in p-n junctions the recombination centers are detected in a single temperature scan independently of their position in the forbidden band. Using capacitance DLTS the time dependence of the recombination processes can be analyzed at a single appropriately chosen temperature. Advantages of selective injection of minority carriers can be exploited in the method.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry