Sb diffusion and segregation in amorphous Si thin films

J. Nyéki, C. Girardeaux, Z. Erdélyi, A. Csik, L. Daróczi, G. Langer, D. L. Beke, A. Rolland, J. Bernardini, G. Erdélyi

Research output: Article

3 Citations (Scopus)


Sb diffusion through an amorphous Si film and antimony segregation kinetics on the top of the Si layer was studied in situ by means of Auger electron spectroscopy in the temperature range of 600-723 K. Segregation factors and antimony diffusivities were estimated from the experimental kinetic curves, on the basis of the model developed by Lea and Seah, the Sb bulk concentration in Si films was measured by transmission electron microscopy. Sb diffusivities proved to be 10-12 orders of magnitude higher than that of measured in crystalline Si.

Original languageEnglish
Pages (from-to)1246-1251
Number of pages6
JournalDefect and Diffusion Forum
Issue numberPART 2
Publication statusPublished - 2005

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Sb diffusion and segregation in amorphous Si thin films'. Together they form a unique fingerprint.

  • Cite this