Sb diffusion through an amorphous Si film and antimony segregation kinetics on the top of the Si layer was studied in situ by means of Auger electron spectroscopy in the temperature range of 600-723 K. Segregation factors and antimony diffusivities were estimated from the experimental kinetic curves, on the basis of the model developed by Lea and Seah, the Sb bulk concentration in Si films was measured by transmission electron microscopy. Sb diffusivities proved to be 10-12 orders of magnitude higher than that of measured in crystalline Si.
|Number of pages||6|
|Journal||Defect and Diffusion Forum|
|Issue number||PART 2|
|Publication status||Published - 2005|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics