RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates

Y. Morilla, J. García López, G. Battistig, J. L. Cantin, J. C. Cheang-Wong, H. J. Von Bardeleben, M. A. Respaldiza

Research output: Conference contribution

2 Citations (Scopus)

Abstract

6H-SiC single crystalline substrates were implanted at room temperature with 2 MeV Al2+ ions to fluences from 2×1014 Al2+ cm-2 to 7×1014 Al2+ cm-2 and with different current densities (from 6.6 to 33×1010 Al 2+ cm-2 s-1). The depth profile of the damage induced by the Al2+ ions was determined by Backscattering Spectrometry in channeling geometry (BS/C) with a 3.5 MeV He2+ beam. The BS/C spectra were evaluated using the RBX code. The samples were subsequently annealed at 1100°C in N2 for one hour, in order to analyze their structural recovery by BS/C and the amount of the remaining defects by means of Electron Paramagnetic Resonance (EPR). The results from the BS/C spectra corresponding to the as-implanted samples indicate that the damage depends strongly on the total fluence but also, although to a lesser extent, on the beam current density. The BS/C measurements reveal that all the samples, except the one implanted with the highest fluence, recover completely their original crystalline structure after the annealing. Furthermore the angular anisotropy of the EPR spectra indicates that the implanted region recovered a good crystallinity, although some residual defects were observed.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages291-294
Number of pages4
Volume483-485
Publication statusPublished - 2005
Event5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004 - Bologna, Italy
Duration: aug. 31 2004szept. 4 2004

Publication series

NameMaterials Science Forum
Volume483-485
ISSN (Print)02555476

Other

Other5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004
CountryItaly
CityBologna
Period8/31/049/4/04

Fingerprint

Backscattering
Spectrometry
Paramagnetic resonance
Geometry
Substrates
Current density
Ions
Crystalline materials
Defects
Anisotropy
Annealing
Recovery
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Morilla, Y., López, J. G., Battistig, G., Cantin, J. L., Cheang-Wong, J. C., Von Bardeleben, H. J., & Respaldiza, M. A. (2005). RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates. In Materials Science Forum (Vol. 483-485, pp. 291-294). (Materials Science Forum; Vol. 483-485).

RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates. / Morilla, Y.; López, J. García; Battistig, G.; Cantin, J. L.; Cheang-Wong, J. C.; Von Bardeleben, H. J.; Respaldiza, M. A.

Materials Science Forum. Vol. 483-485 2005. p. 291-294 (Materials Science Forum; Vol. 483-485).

Research output: Conference contribution

Morilla, Y, López, JG, Battistig, G, Cantin, JL, Cheang-Wong, JC, Von Bardeleben, HJ & Respaldiza, MA 2005, RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates. in Materials Science Forum. vol. 483-485, Materials Science Forum, vol. 483-485, pp. 291-294, 5th European Conference on Silicon Carbide and Related Materials, ECRSCRM2004, Bologna, Italy, 8/31/04.
Morilla Y, López JG, Battistig G, Cantin JL, Cheang-Wong JC, Von Bardeleben HJ et al. RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates. In Materials Science Forum. Vol. 483-485. 2005. p. 291-294. (Materials Science Forum).
Morilla, Y. ; López, J. García ; Battistig, G. ; Cantin, J. L. ; Cheang-Wong, J. C. ; Von Bardeleben, H. J. ; Respaldiza, M. A. / RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates. Materials Science Forum. Vol. 483-485 2005. pp. 291-294 (Materials Science Forum).
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AU - López, J. García

AU - Battistig, G.

AU - Cantin, J. L.

AU - Cheang-Wong, J. C.

AU - Von Bardeleben, H. J.

AU - Respaldiza, M. A.

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AB - 6H-SiC single crystalline substrates were implanted at room temperature with 2 MeV Al2+ ions to fluences from 2×1014 Al2+ cm-2 to 7×1014 Al2+ cm-2 and with different current densities (from 6.6 to 33×1010 Al 2+ cm-2 s-1). The depth profile of the damage induced by the Al2+ ions was determined by Backscattering Spectrometry in channeling geometry (BS/C) with a 3.5 MeV He2+ beam. The BS/C spectra were evaluated using the RBX code. The samples were subsequently annealed at 1100°C in N2 for one hour, in order to analyze their structural recovery by BS/C and the amount of the remaining defects by means of Electron Paramagnetic Resonance (EPR). The results from the BS/C spectra corresponding to the as-implanted samples indicate that the damage depends strongly on the total fluence but also, although to a lesser extent, on the beam current density. The BS/C measurements reveal that all the samples, except the one implanted with the highest fluence, recover completely their original crystalline structure after the annealing. Furthermore the angular anisotropy of the EPR spectra indicates that the implanted region recovered a good crystallinity, although some residual defects were observed.

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