Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni 2 Si and Si(1 0 0) substrate

S. S. Shenouda, G. A. Langer, G. L. Katona, L. Daróczi, A. Csik, D. L. Beke

Research output: Article

11 Citations (Scopus)


We report a process to obtain thin (5-20 nm thick) NiSi layers on Si(1 0 0) substrate from magnetron deposited Ni 2 Si thin films at low temperatures (180-200 °C). The time evolution of transformation was followed by means of Secondary Neutral Mass Spectrometry, transmission electron microscopy and resistance measurements. It is shown that there exist certain temperature-time and thickness-time windows inside of which the formation of NiSi takes place. The NiSi phase, formed along the grain boundaries of Ni 2 Si and grew by the motion of these interfaces, gradually consumes the Ni 2 Si phase. From the depth profiles of the first stage of the process, using the linear dependence of the average composition inside the film on the annealing time, the velocity of the grain boundary diffusion induced interface motion was also estimated. The normalized value of the resistance, proportional to the amount of the new phase, showed similar time evolution and yielded similar value for the interface velocity.

Original languageEnglish
Pages (from-to)627-633
Number of pages7
JournalApplied Surface Science
Publication statusPublished - nov. 30 2014

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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