Point contacts in encapsulated graphene

Clevin Handschin, Bálint Fülöp, Péter Makk, Sofya Blanter, Markus Weiss, Kenji Watanabe, Takashi Taniguchi, Szabolcs Csonka, Christian Schönenberger

Research output: Article

3 Citations (Scopus)

Abstract

We present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5-1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.

Original languageEnglish
Article number183108
JournalApplied Physics Letters
Volume107
Issue number18
DOIs
Publication statusPublished - nov. 2 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Handschin, C., Fülöp, B., Makk, P., Blanter, S., Weiss, M., Watanabe, K., Taniguchi, T., Csonka, S., & Schönenberger, C. (2015). Point contacts in encapsulated graphene. Applied Physics Letters, 107(18), [183108]. https://doi.org/10.1063/1.4935032