Phase growth in an amorphous Si-Cu system, as shown by a combination of SNMS, XPS, XRD and APT techniques

Bence Parditka, Mariana Verezhak, Zoltán Balogh, A. Csík, G. Langer, D. Beke, Mohammed Ibrahim, Guido Schmitz, Z. Erdélyi

Research output: Article

14 Citations (Scopus)

Abstract

It is shown, by the combination of secondary neutral mass spectrometry (SNMS), X-ray diffraction and atom probe tomography (APT), that the growth of a Cu3Si crystalline layer between amorphous Si and nanocrystalline Cu thin films at 408 K follows a linear law and the shifts of the Cu 3Si/Cu and Cu3Si/amorphous Si interfaces contribute approximately equally to the growth of this phase. It is also illustrated that the Si atoms diffuse rapidly into the grain boundaries of the nanocrystalline Cu, leading to Si segregation on the outer surface and to an increase in the overall Si content inside the Cu layer. Both the SNMS and APT results indicate that, even during the deposition of Cu on the amorphous Si, an intermixed region (of about 10 nm thick) is formed at the interface. This readily transforms into a homogeneous Cu3Si crystalline reaction layer which grows further, apparently following an interface-controlled linear kinetics.

Original languageEnglish
Pages (from-to)7173-7179
Number of pages7
JournalActa Materialia
Volume61
Issue number19
DOIs
Publication statusPublished - nov. 2013

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Tomography
Mass spectrometry
X ray photoelectron spectroscopy
Atoms
Crystalline materials
Grain boundaries
X ray diffraction
Thin films
Kinetics

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Cite this

Phase growth in an amorphous Si-Cu system, as shown by a combination of SNMS, XPS, XRD and APT techniques. / Parditka, Bence; Verezhak, Mariana; Balogh, Zoltán; Csík, A.; Langer, G.; Beke, D.; Ibrahim, Mohammed; Schmitz, Guido; Erdélyi, Z.

In: Acta Materialia, Vol. 61, No. 19, 11.2013, p. 7173-7179.

Research output: Article

Parditka, Bence ; Verezhak, Mariana ; Balogh, Zoltán ; Csík, A. ; Langer, G. ; Beke, D. ; Ibrahim, Mohammed ; Schmitz, Guido ; Erdélyi, Z. / Phase growth in an amorphous Si-Cu system, as shown by a combination of SNMS, XPS, XRD and APT techniques. In: Acta Materialia. 2013 ; Vol. 61, No. 19. pp. 7173-7179.
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AU - Verezhak, Mariana

AU - Balogh, Zoltán

AU - Csík, A.

AU - Langer, G.

AU - Beke, D.

AU - Ibrahim, Mohammed

AU - Schmitz, Guido

AU - Erdélyi, Z.

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N2 - It is shown, by the combination of secondary neutral mass spectrometry (SNMS), X-ray diffraction and atom probe tomography (APT), that the growth of a Cu3Si crystalline layer between amorphous Si and nanocrystalline Cu thin films at 408 K follows a linear law and the shifts of the Cu 3Si/Cu and Cu3Si/amorphous Si interfaces contribute approximately equally to the growth of this phase. It is also illustrated that the Si atoms diffuse rapidly into the grain boundaries of the nanocrystalline Cu, leading to Si segregation on the outer surface and to an increase in the overall Si content inside the Cu layer. Both the SNMS and APT results indicate that, even during the deposition of Cu on the amorphous Si, an intermixed region (of about 10 nm thick) is formed at the interface. This readily transforms into a homogeneous Cu3Si crystalline reaction layer which grows further, apparently following an interface-controlled linear kinetics.

AB - It is shown, by the combination of secondary neutral mass spectrometry (SNMS), X-ray diffraction and atom probe tomography (APT), that the growth of a Cu3Si crystalline layer between amorphous Si and nanocrystalline Cu thin films at 408 K follows a linear law and the shifts of the Cu 3Si/Cu and Cu3Si/amorphous Si interfaces contribute approximately equally to the growth of this phase. It is also illustrated that the Si atoms diffuse rapidly into the grain boundaries of the nanocrystalline Cu, leading to Si segregation on the outer surface and to an increase in the overall Si content inside the Cu layer. Both the SNMS and APT results indicate that, even during the deposition of Cu on the amorphous Si, an intermixed region (of about 10 nm thick) is formed at the interface. This readily transforms into a homogeneous Cu3Si crystalline reaction layer which grows further, apparently following an interface-controlled linear kinetics.

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KW - XPS

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