Optical properties of the niobium centre in 4H, 6H, and 15R SiC

Ivan G. Ivanov, Andreas Gällström, Stefano Leone, Olof Kordina, N. T. Son, Anne Henry, Viktor Ivády, Adam Gali, Erik Janzén

Research output: Conference contribution

1 Citation (Scopus)

Abstract

A set of lines in the photoluminescence spectra of 4H-, 6H-, and 15R-SiC in the near- infrared are attributed to Nb-related defects on the ground of doping experiments conducted with 4H-SiC. A model based on a an exciton bound at the Nb-centre in an asymmetric split vacancy configuration at a hexagonal site is proposed, which explains the structure of the luminescence spectrum and the observed Zeeman splitting of the lines.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012, ECSCRM 2012
Pages405-408
Number of pages4
DOIs
Publication statusPublished - febr. 25 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: szept. 2 2012szept. 6 2012

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)0255-5476

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period9/2/129/6/12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Ivanov, I. G., Gällström, A., Leone, S., Kordina, O., Son, N. T., Henry, A., Ivády, V., Gali, A., & Janzén, E. (2013). Optical properties of the niobium centre in 4H, 6H, and 15R SiC. In Silicon Carbide and Related Materials 2012, ECSCRM 2012 (pp. 405-408). (Materials Science Forum; Vol. 740-742). https://doi.org/10.4028/www.scientific.net/MSF.740-742.405