Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide

B. Farkas, P. Heszler, J. Budai, A. Oszkó, M. Ottosson, Z. Geretovszky

Research output: Article

1 Citation (Scopus)

Abstract

N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the higher dopant concentration inhibits the crystallization of the samples.

Original languageEnglish
Pages (from-to)149-154
Number of pages6
JournalApplied Surface Science
Volume433
DOIs
Publication statusPublished - márc. 1 2018

Fingerprint

Pulsed lasers
Gas mixtures
Titanium dioxide
Structural properties
Nitrogen
Optical properties
Spectroscopic ellipsometry
Optical band gaps
Pulsed laser deposition
Crystallization
Refractive index
X ray photoelectron spectroscopy
Doping (additives)
X ray diffraction
Thin films
Wavelength
Substrates
Processing
Temperature
titanium dioxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

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title = "Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide",
abstract = "N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.{\%}, but the higher dopant concentration inhibits the crystallization of the samples.",
keywords = "Chemical composition, Ellipsometry, Photocatalytic material, PLD, Structural property, TiON",
author = "B. Farkas and P. Heszler and J. Budai and A. Oszk{\'o} and M. Ottosson and Z. Geretovszky",
year = "2018",
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TY - JOUR

T1 - Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide

AU - Farkas, B.

AU - Heszler, P.

AU - Budai, J.

AU - Oszkó, A.

AU - Ottosson, M.

AU - Geretovszky, Z.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the higher dopant concentration inhibits the crystallization of the samples.

AB - N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the higher dopant concentration inhibits the crystallization of the samples.

KW - Chemical composition

KW - Ellipsometry

KW - Photocatalytic material

KW - PLD

KW - Structural property

KW - TiON

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JO - Applied Surface Science

JF - Applied Surface Science

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