Optical characterization of PLD grown nitrogen-doped TiO 2 thin films

B. Farkas, J. Budai, I. Kabalci, P. Heszler, Zs Geretovszky

Research output: Article

21 Citations (Scopus)

Abstract

Nitrogen-doped TiO 2 thin films were prepared by pulsed laser deposition (PLD) by ablating metallic Ti target with pulses of 248 nm wavelength in reactive atmospheres of O 2 /N 2 gas mixtures. The layers were characterized by UV-VIS spectrophotometry and variable angle spectroscopic ellipsometry with complementary profilometry for measuring the thickness of the films. Band gap and extinction coefficient values are presented for films deposited at different substrate temperatures and for varied N 2 content of the gas mixture. The shown tendencies are correlated to nitrogen incorporation into the TiO 2-x N x layers. It is shown that layers of significantly increased visible extinction coefficient with band gap energy as low as 2.89 eV can be obtained. A method is also presented how the spectroscopic ellipsometric data should be evaluated in order to result reliable band gap values.

Original languageEnglish
Pages (from-to)3484-3488
Number of pages5
JournalApplied Surface Science
Volume254
Issue number11
DOIs
Publication statusPublished - márc. 30 2008

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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