Optical characterization of patterned thin films

D. Rosu, P. Petrik, G. Rattmann, M. Schellenberger, U. Beck, A. Hertwig

Research output: Article

2 Citations (Scopus)

Abstract

The present study investigates the use of imaging and mapping ellipsometry to determine the properties of non-ideal and patterned thin film samples. Samples which are candidates for future references and standards were prepared for this purpose. The samples investigated were lithographically patterned SiO2 and photoresist layers. The thickness and the optical constants of the two materials were determined using spectroscopic ellipsometry in the visible spectral range. On a larger lateral scale of several mm lateral resolution, the homogeneity was investigated using a goniospectral rotating compensator ellipsometer. A nulling imaging ellipsometer was used to determine the properties of the sample on a smaller scale of 25-150 μm.

Original languageEnglish
Pages (from-to)601-604
Number of pages4
JournalThin Solid Films
Volume571
Issue numberP3
DOIs
Publication statusPublished - nov. 28 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Rosu, D., Petrik, P., Rattmann, G., Schellenberger, M., Beck, U., & Hertwig, A. (2014). Optical characterization of patterned thin films. Thin Solid Films, 571(P3), 601-604. https://doi.org/10.1016/j.tsf.2013.11.052