On the nature of metal-porous Si-single crystal silicon (MPS) diodes

K. Molnár, T. Mohácsy, A. H. Abdulhadi, J. Volk, I. Bársony

Research output: Article

3 Citations (Scopus)

Abstract

In order to provide a consistent explanation of the operation, the factors contributing to the current through an MPS diode were analysed in forward biasing on an n-type, mesoporous structure. The diodes having a degenerate n-doped ITO metallisation were characterised by recording the temperature dependent I-V characteristics in a vacuum cryostat in the temperature range of T = 100 K to 300 K. A systematic deconvolution of the obtained I-V curves, after stripping them from the contributions of ohmic conductance, resulted in a purely Fowler-Nordheim tunnelling behaviour. The present analysis in forward operation lead to very similar results as obtained formerly in the reverse biasing case [Molnar et al., J. Lumin. 80.91 (1991)], except that no significant electroluminescence was observed here.

Original languageEnglish
Pages (from-to)446-451
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume197
Issue number2
DOIs
Publication statusPublished - máj. 2003

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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