On the growth mechanism of pulsed laser deposited carbon nitride films

T. Szörényi, E. Fogarassy

Research output: Article

7 Citations (Scopus)

Abstract

Carbon nitride films have been deposited by ArF excimer laser ablation of a graphite target in the 10 -2 to 100Pa N 2 pressure range. Arrival rates of the constituting elements, mass densities and apparent growth rates have been derived from areal densities of both carbon and nitrogen atoms, determined by ion beam techniques, and film thicknesses, measured by a mechanical stylus. Below 5Pa the film building blocks are atoms and molecules while above ∼50Pa the formation and interaction of clusters and particles determine the film growth. The results reveal that the formation, composition and microstructure of carbon nitride films fabricated in this process window is governed by gas-phase processes.

Original languageEnglish
Pages (from-to)502-506
Number of pages5
JournalApplied Surface Science
Volume208-209
Issue number1
DOIs
Publication statusPublished - márc. 15 2003

    Fingerprint

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this