Noise measurements on thin films deposited from vanadium pentoxide gels

L. B. Kiss, K. Bali, T. Szörényi, I. Hevesi

Research output: Article

6 Citations (Scopus)

Abstract

Between 20 Hz and 10 KHz vanadium pentoxide xerogel films of 5-150 nm thickness display 1 f noise with a power spectrum SG({cauchy integral}) ∝ {cauchy integral}-1.1. The upper limit of the free charge carrier concentration determined from noise measurements (1017 - 6 × 1018 cm-3 with weak dependence of thickness) is approximately two orders of magnitude higher than that of V2O5 single crystals but several orders of magnitude lower than the V4+ concentration (∼ 2 × 1020 cm-3) in the films suggesting that hydration increases the number of V4+ ions active in the conduction process.

Original languageEnglish
Pages (from-to)609-611
Number of pages3
JournalSolid State Communications
Volume58
Issue number9
DOIs
Publication statusPublished - jún. 1986

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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