New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC

F. Yan, R. P. Devaty, W. J. Choyke, T. Kimoto, T. Ohshima, G. Pensl, A. Gali

Research output: Conference contribution

5 Citations (Scopus)

Abstract

In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm -2 electron beams in an electron microscope and now produced by low dose 1015 cm-2 electron, 5×1010 cm -2 proton and helium ion irradiation. New no phonon lines E 0, F0, θ0, Φ0, K 0, G0, J0, M0 and phonon replicas are found. Phonon replicas up to the fifth harmonic are well accounted for by theory giving convincing new evidence that the di-carbon antisite is responsible for these deep defect lines.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Pages411-414
Number of pages4
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - jan. 1 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: okt. 11 2009okt. 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)0255-5476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Yan, F., Devaty, R. P., Choyke, W. J., Kimoto, T., Ohshima, T., Pensl, G., & Gali, A. (2010). New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 411-414). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.411