This work reports on the promptly forming fraction and the spin relaxation rate of the isotropic muonium (MUT) component in p-type semi-conducting diamond, measured under the condition of illumination. The data are the first such investigations for diamond. A broad band illumination with wavelengths ranging from 0.5 μm to 3 μm was obtained from a Xenon lamp. The energy of the photons was sufficient to excite electrons from the valence band to the 0.28 ppm boron impurity band (0.37 eV). The Transverse Field Muon Spin Rotation (TF-μSR) measurements were conducted as a function of temperature, ranging from 5 K to 300 K. An illumination effect at temperatures below 100 K is observed. It is not yet clear from these data whether the effect is due to MUT scattering off delocalized holes, which are removed by illumination or whether there is prompt trapping of MUT at boron impurities (passivation) which is affected by illumination.
|Number of pages||5|
|Publication status||Published - dec. 1 1999|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Nuclear and High Energy Physics
- Condensed Matter Physics
- Physical and Theoretical Chemistry