Morphology and electrical behaviour of Pd2Si/p-Si junctions

Z. Horváth, J. Kumar, L. Dobos, B. Pécz, A. Tóth, S. Chand, J. Karányi

Research output: Conference contribution

Abstract

Dendrite like morphology was observed in Pd2Si/p-Si junctions. The obtained high ideality factors and the significant difference between the apparent barrier heights evaluated from the current-voltage and capacitance-voltage measurements are explained on the basis of this morphology.

Original languageEnglish
Title of host publicationASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages261-263
Number of pages3
ISBN (Print)0780359399, 9780780359390
DOIs
Publication statusPublished - 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: okt. 16 2000okt. 18 2000

Other

Other3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
CountrySlovakia
CitySmolenice
Period10/16/0010/18/00

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horváth, Z., Kumar, J., Dobos, L., Pécz, B., Tóth, A., Chand, S., & Karányi, J. (2000). Morphology and electrical behaviour of Pd2Si/p-Si junctions. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 261-263). [889496] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889496