Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

O. Yastrubchak, T. Wosiński, J. Z. Domagała, E. Łusakowska, T. Figielski, B. Pécz, A. L. Tóth

Research output: Article

41 Citations (Scopus)


Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch have been studied by means of atomic force microscopy and high-resolution x-ray diffractometry. Additionally, electron-beam induced current in a scanning electron microscope and transmission electron microscopy have been employed to investigate misfit dislocations formed at the (001) heterostructure interface. The measurements revealed a direct correlation between the surface cross-hatched morphology and the arrangement of interfacial misfit dislocations. The reciprocal lattice mapping and the rocking curve techniques employed for the samples aligned with either the [1̄10] or the [110] crystallographic direction perpendicular to the diffraction plane revealed anisotropic misfit strain relaxation of the InGaAs layers. This anisotropy results from an asymmetry in the formation of the α and β types of misfit dislocations oriented along the [1̄10] and [110] directions, respectively, which differ in their core structures. The misfit strain anisotropy causes a distortion of the unit cell of the layer and lowers its symmetry to orthorhombic.

Original languageEnglish
Pages (from-to)S1-S8
JournalJournal of Physics Condensed Matter
Issue number2
Publication statusPublished - jan. 21 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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