A quantitative approach to the Makyoh-topography image formation mechanism is presented. General relations are given on the optical settings; geometrical optical simulations of a sinusoidal surface and a hillock (or depression) are presented. Optimum working conditions are established, and general features of the imaging are pointed out. The experimental images taken for Si wafers are compared to the results of the model.
|Number of pages||7|
|Journal||Physica Status Solidi (A) Applied Research|
|Publication status||Published - jan. 1 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics