Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Milan Ťapajna, Lukáš Válik, Filip Gucmann, Dagmar Gregušová, Karol Fröhlich, Štefan Haščík, Edmund Dobročka, L. Tóth, B. Pécz, Ján Kuzmík

Research output: Article

7 Citations (Scopus)

Abstract

The oxide/semiconductor interface state density (Dit) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with gate oxides grown by atomic layer deposition at low deposition temperature is analyzed in this work. MOS-HEMT structures with Al2O3 gate oxide were deposited at 100 and 300 °C using trimethylaluminum precursor and H2O and O3 oxidation agents. The structures were found to show negative net charge at oxide/barrier interface with density (Nint) of 1013cm−2, which was attributed to the reduction of barrier surface donor density (NDS). Dit was determined using capacitance transient techniques, and the results were assessed by the simulations of the capacitance-voltage characteristics affected by interface traps. The results indicate a lower interface quality of the sample with Al2O3 grown using O3 agent compared to those with H2O, even though the former provided lowest gate leakage among the analyzed structures. Moreover, to uncover the NDS nature, Dit distributions determined here were compared to that reported previously on devices with Nint close to zero, i.e., with fully compensated surface barrier polarization charge by NDS [Ťapajna et al., J. Appl. Phys. 116, 104501 (2014)]. No clear correlation between Dit and NDS was concluded, indicating the nature of NDS to be different from that of interface states in the energy range analyzed here.

Original languageEnglish
Article number01A107
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume35
Issue number1
DOIs
Publication statusPublished - jan. 1 2017

Fingerprint

Atomic layer deposition
Interface states
Gate dielectrics
High electron mobility transistors
atomic layer epitaxy
high electron mobility transistors
Oxides
Capacitance
oxides
metal oxide semiconductors
Metals
Temperature
capacitance-voltage characteristics
Polarization
Oxidation
Electric potential
density distribution
leakage
capacitance
Oxide semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs : Impact of deposition conditions on interface state density. / Ťapajna, Milan; Válik, Lukáš; Gucmann, Filip; Gregušová, Dagmar; Fröhlich, Karol; Haščík, Štefan; Dobročka, Edmund; Tóth, L.; Pécz, B.; Kuzmík, Ján.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, No. 1, 01A107, 01.01.2017.

Research output: Article

Ťapajna, Milan ; Válik, Lukáš ; Gucmann, Filip ; Gregušová, Dagmar ; Fröhlich, Karol ; Haščík, Štefan ; Dobročka, Edmund ; Tóth, L. ; Pécz, B. ; Kuzmík, Ján. / Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs : Impact of deposition conditions on interface state density. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2017 ; Vol. 35, No. 1.
@article{bc6da41d1d51403b86c1452fb6cf74ad,
title = "Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density",
abstract = "The oxide/semiconductor interface state density (Dit) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with gate oxides grown by atomic layer deposition at low deposition temperature is analyzed in this work. MOS-HEMT structures with Al2O3 gate oxide were deposited at 100 and 300 °C using trimethylaluminum precursor and H2O and O3 oxidation agents. The structures were found to show negative net charge at oxide/barrier interface with density (Nint) of 1013cm−2, which was attributed to the reduction of barrier surface donor density (NDS). Dit was determined using capacitance transient techniques, and the results were assessed by the simulations of the capacitance-voltage characteristics affected by interface traps. The results indicate a lower interface quality of the sample with Al2O3 grown using O3 agent compared to those with H2O, even though the former provided lowest gate leakage among the analyzed structures. Moreover, to uncover the NDS nature, Dit distributions determined here were compared to that reported previously on devices with Nint close to zero, i.e., with fully compensated surface barrier polarization charge by NDS [Ťapajna et al., J. Appl. Phys. 116, 104501 (2014)]. No clear correlation between Dit and NDS was concluded, indicating the nature of NDS to be different from that of interface states in the energy range analyzed here.",
author = "Milan Ťapajna and Luk{\'a}š V{\'a}lik and Filip Gucmann and Dagmar Gregušov{\'a} and Karol Fr{\"o}hlich and Štefan Hašč{\'i}k and Edmund Dobročka and L. T{\'o}th and B. P{\'e}cz and J{\'a}n Kuzm{\'i}k",
year = "2017",
month = "1",
day = "1",
doi = "10.1116/1.4972870",
language = "English",
volume = "35",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs

T2 - Impact of deposition conditions on interface state density

AU - Ťapajna, Milan

AU - Válik, Lukáš

AU - Gucmann, Filip

AU - Gregušová, Dagmar

AU - Fröhlich, Karol

AU - Haščík, Štefan

AU - Dobročka, Edmund

AU - Tóth, L.

AU - Pécz, B.

AU - Kuzmík, Ján

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The oxide/semiconductor interface state density (Dit) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with gate oxides grown by atomic layer deposition at low deposition temperature is analyzed in this work. MOS-HEMT structures with Al2O3 gate oxide were deposited at 100 and 300 °C using trimethylaluminum precursor and H2O and O3 oxidation agents. The structures were found to show negative net charge at oxide/barrier interface with density (Nint) of 1013cm−2, which was attributed to the reduction of barrier surface donor density (NDS). Dit was determined using capacitance transient techniques, and the results were assessed by the simulations of the capacitance-voltage characteristics affected by interface traps. The results indicate a lower interface quality of the sample with Al2O3 grown using O3 agent compared to those with H2O, even though the former provided lowest gate leakage among the analyzed structures. Moreover, to uncover the NDS nature, Dit distributions determined here were compared to that reported previously on devices with Nint close to zero, i.e., with fully compensated surface barrier polarization charge by NDS [Ťapajna et al., J. Appl. Phys. 116, 104501 (2014)]. No clear correlation between Dit and NDS was concluded, indicating the nature of NDS to be different from that of interface states in the energy range analyzed here.

AB - The oxide/semiconductor interface state density (Dit) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with gate oxides grown by atomic layer deposition at low deposition temperature is analyzed in this work. MOS-HEMT structures with Al2O3 gate oxide were deposited at 100 and 300 °C using trimethylaluminum precursor and H2O and O3 oxidation agents. The structures were found to show negative net charge at oxide/barrier interface with density (Nint) of 1013cm−2, which was attributed to the reduction of barrier surface donor density (NDS). Dit was determined using capacitance transient techniques, and the results were assessed by the simulations of the capacitance-voltage characteristics affected by interface traps. The results indicate a lower interface quality of the sample with Al2O3 grown using O3 agent compared to those with H2O, even though the former provided lowest gate leakage among the analyzed structures. Moreover, to uncover the NDS nature, Dit distributions determined here were compared to that reported previously on devices with Nint close to zero, i.e., with fully compensated surface barrier polarization charge by NDS [Ťapajna et al., J. Appl. Phys. 116, 104501 (2014)]. No clear correlation between Dit and NDS was concluded, indicating the nature of NDS to be different from that of interface states in the energy range analyzed here.

UR - http://www.scopus.com/inward/record.url?scp=85007545341&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85007545341&partnerID=8YFLogxK

U2 - 10.1116/1.4972870

DO - 10.1116/1.4972870

M3 - Article

AN - SCOPUS:85007545341

VL - 35

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

M1 - 01A107

ER -