Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC

R. P. Devaty, Fei Yan, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima

Research output: Conference contribution

1 Citation (Scopus)

Abstract

The C-C stretch vibration associated with the dicarbon antisite in 4H SiC has been observed out to the fifth harmonic in the low temperature photoluminescence spectrum. The anharmonicity is accounted for reasonably well by fits to the data based on the Morse potential. We combine the observations from experiment, the analytically tractable Morse potential, and results obtained from first principles calculations on this defect to obtain an estimate of the thermal expansion coefficient of the C-C bond. This local thermal expansion coefficient is considerably smaller than the linear thermal expansion coefficient of bulk 4H SiC, in striking contrast with the recent result for the nitrogen-vacancy center in diamond that the local thermal expansion coefficient is larger than the bulk value.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages263-266
Number of pages4
DOIs
Publication statusPublished - máj. 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: szept. 11 2011szept. 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC'. Together they form a unique fingerprint.

  • Cite this

    Devaty, R. P., Yan, F., Choyke, W. J., Gali, A., Kimoto, T., & Ohshima, T. (2012). Local thermal expansion and the C-C stretch vibration of the dicarbon antisite in 4H SiC. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 263-266). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.263