Liquid phase epitaxy of AlGaInSb

E. Lendvay, V. A. Gevorkyan, L. Petrás, I. Pozsgai, T. Görög, A. L. Tóth

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1 Citation (Scopus)

Abstract

Epitaxial growth of the AlGaInSb pseudo-ternary on GaAs, GaSb and InSb substrates was investigated. The LPE growth was performed using In- and Ga-rich melts and different growth parameters such as cooling rate, supercooling, etc. The heteroepitaxial systems were evaluated by several methods; the growth morphologies and layer thickness were investigated by scanning electron microscopy, the composition of the quaternary was determined by X-ray microanalysis using both energy and wavelength dispersive analysis, and the lattice matching and layer perfection were analysed using X-ray rocking curves. It was demonstrated that good quality AlGaInSb epitaxial layers and p-n junctions were formed using In-rich melts and GaSb substrates.

Original languageEnglish
Pages (from-to)63-72
Number of pages10
JournalJournal of Crystal Growth
Volume73
Issue number1
DOIs
Publication statusPublished - okt. 1985

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Lendvay, E., Gevorkyan, V. A., Petrás, L., Pozsgai, I., Görög, T., & Tóth, A. L. (1985). Liquid phase epitaxy of AlGaInSb. Journal of Crystal Growth, 73(1), 63-72. https://doi.org/10.1016/0022-0248(85)90331-8