Scanning tunnelling microscopy images of stoichiometric and thus electrically insulating Ga2O3 thin films are presented for the first time. These ceramic films were deposited by RF sputtering. Characterisation was by means of RBS (stoichiometry) and X-ray fluorescence (contaminants). The scanning tunnelling microscopy results are consistent with those of high-resolution scanning electron microscopy. For scanning electron microscopy the specimens had to be covered by a thin metallisation. This was not necessary for the scanning tunnelling microscopy images. The presented results show that scanning tunnelling microscopy is suitable for the detailed study of insulating thin-film ceramics. This is a prerequisite for future studies of ultra-thin metallisation on thin film ceramics (supported catalysts) with superior vertical resolution.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films