KINETICS OF TiSi//2 FORMATION BY THIN Ti FILMS ON Si.

L. S. Hung, J. Gyulai, J. W. Mayer

Research output: Article

126 Citations (Scopus)

Abstract

Silicide formation with Ti deposited on single crystal Si and Ti deposited on amorphous Si layers sequentially without breaking the vacuum was investigated using backscattering spectrometry and glancing-angle x-ray diffraction. For Ti deposited on amorphous Si, TiSi//2 was formed with a rate proportional to (time)** one-half and an activation energy of 1. 8 plus or minus 0. 1 ev. For Ti deposited on single crystal Si, the reaction rate was slower and the silicide layer was nonuniform in thickness. The authors attribute the difference in behavior to the presences of interfacial impurities in the case where Ti was deposited on single crystal Si.

Original languageEnglish
Pages (from-to)5076-5080
Number of pages5
JournalJournal of Applied Physics
Volume54
Issue number9
DOIs
Publication statusPublished - szept. 1983

Fingerprint

single crystals
backscattering
reaction kinetics
x ray diffraction
activation energy
impurities
vacuum
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

KINETICS OF TiSi//2 FORMATION BY THIN Ti FILMS ON Si. / Hung, L. S.; Gyulai, J.; Mayer, J. W.

In: Journal of Applied Physics, Vol. 54, No. 9, 09.1983, p. 5076-5080.

Research output: Article

Hung, L. S. ; Gyulai, J. ; Mayer, J. W. / KINETICS OF TiSi//2 FORMATION BY THIN Ti FILMS ON Si. In: Journal of Applied Physics. 1983 ; Vol. 54, No. 9. pp. 5076-5080.
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